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Abstract
Ba0.6Sr0.4TiO3 thin film with aliovalent doping of acceptor nature at ‘A’ lattice sites of ABO3 structure were prepared by a metal organic solution deposition (MOSD) technique on low loss quartz substrate. Oxide thin film having perovskite structure, namely, lanthanum nicklate (LaNiO3), also deposited using chemical solution deposition technique (CSD), was used as conductive bottom electrode. Solution properties and deposition process parameters were optimized for crack-free, uniform and smooth, pure and doped BST films on LNO electrode. The structural and microstructural analyses of the film were done using X-ray diffraction (XRD) and atomic force microscopy (AFM). Dielectric properties of the deposited film were studied using C-V and C-F electrical characterizations. The results indicate high tunability of 46%, very low loss tangent of 0.0065 with corresponding figure of merits of 71 for 2% K doped BST films at 1 MHz. The considerable improvement of dielectric properties of doped films compare to pure BST film is due to combined effect of perovskite lattice matched conductive bottom electrode and optimum doping level. These films had moderate dielectric constant, very low loss with good tunability which is suitable for tunable microwave applications.
Acknowledgments
Authors are grateful to A. N. Bhattacharya, Group Director, Micro Electronics Group, and Rajkumar Arora, Deputy Director, Electronics Support Service Area for the encouragement and support. Authors are thankful to Tapan Misra, Director, Space Applications Centre for kind approval for publication. Authors also acknowledge various fabrication and characterization support extended by Micro Electronics Group and Quality Assurance Group of Space Applications Centre during the course of the work.