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ABSTRACT
In this work, we fabricate the p-type ZnO/AlN/ZnO core-shell nanowire arrays on Al2O3 substrate. The SEM images show the core-shell structure and the connection phenomenon appeared during the deposition process. The XRD results show a better crystal quality after annealing. The sample exhibits some unique properties after annealing treatment. Including the improvement of crystal quality and the shift of the PL emission peak. The low temperture PL spectra show a neutral acceptor bound exciton (A0X) emission (at 3.355 eV), and the emission at 3.325 eV is ascribe to the free electron to the acceptor transition (FA). The calculated result is found in good coincidence with the experiment.
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Funding
This work is supported by the National Natural Science Foundation of China (61204065, 61205193, 61307045, 61404009, 61474010, 11404219 and 11404161), the Developing Project of Science and Technology of Jilin Province (20130101026JC), National Key Lab of High Power Semiconductor Lasers Foundation.