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Original Articles

Properties of Al-doped ZnO films grown by atmospheric pressure MOCVD on different orientation sapphire substrates

, , , , , , & show all
Pages 128-139 | Received 05 Oct 2015, Accepted 12 Feb 2016, Published online: 17 Jun 2016
 

ABSTRACT

Al-doped ZnO films were grown on different orientation sapphire substrates (sapphire-R, C, M, A) at 400–600 °C via the atmospheric pressure aerosol-assisted MOCVD technique. The influence of deposition temperature and orientation of sapphire substrate on the microstructure, electrical and optical properties of ZnO-Al films was investigated. Epitaxial films grown on sapphire-R substrates exhibited the best electrical properties: carrier mobility was 50–60 cm2 V−1 s−1, resistivity <10−3 Ω cm. The conditions of post-deposition treatment of films (gas atmosphere during film cooling after deposition, ex-situ annealing) had a marked influence on the electrical properties of films.

Funding

This work was supported by the Research Council of Lithuania (Grant No. MIP-023/2013).

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