Comparative study of wet sulfur passivation process on GaSb (100) surface

ABSTRACT

A comparative study for the pristine and sulfur passivated surfaces of gallium antimonide (GaSb) grown using molecular beam epitaxy is presented with the results recorded through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) techniques. The as-grown GaSb surfaces were treated separately with 20% aqueous ammonium sulphide, ((NH₄)₂S), at 60°C for 10 m, aqueous sodium sulfide nonahydrate (Na₂S.9H₂O) with molarity 1 for 4 m at room temperature and base-thioacetamide (base-TAM) with molarity 0.18 for 40 m at 70°C. AFM topography shows the formation of very clean and flat surface for base-TAM treated GaSb. XPS results reveal lowest concentration of Ga₂O₃for GaSb surface treated with base-TAM.

KEYWORDS:

• Gallium antimonide
• surface passivation
• molecular beam epitaxy

Acknowledgment

The authors would like to thank director, SSPL to encourage and allow to publish this work.