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Abstract
In this study, it is shown that with the increase of the number of layers of ultrathin MoS2 nanomaterials, the spacing of Raman shift increased and the photoluminescence intensity decreased. The monolayer MoS2 nanomaterials had the strongest photoluminescence intensity due to the rapid decrease of electron relaxation rate. With decreasing of temperature, the intensity emission enhanced and had a blue shift gradually. At the temperature of 79 K, the bound exciton luminescence peak was found, which was caused by the defect of the contact surface of the MoS2 and the SiO2/Si substrate or the impurities on the surface of the sample.
Additional information
Funding
This work is supported by the“111” Project of China (D17017), the National Natural Science Foundation of China (21703017, 11604024), the Advance Research Project of Weapon and Equipment (6140414020102), the Developing Project of Science and Technology of Jilin Province (20190201181JC, 20200201060JC, 20200201271JC, 20200201255JC, 20200201266JC), the International Science and Technology Cooperation Project of Jilin Province (20190701029GH), the Project of Education Department of Jilin Province (JJKH20190551KJ, JJKH20200730KJ), the China Postdoctoral Science Foundation (2019M651181), and the Youth Fund and Technology Innovation Fund of Changchun University of science and technology (XQNJJ-2018-03, XJJLG-2018-01).