Temperature Dependence of Structure, Dielectric and Energy Storage Properties in Bi_3.15Nd_0.85Ti₃O₁₂ Thin Films

Abstract

In this work, 80-nm Bi_3.15Nd_0.85Ti₃O₁₂ thin films with different annealing temperature have been successfully fabricated on p-type silicon substrates by sol-gel method. The effect of annealing temperature on the microstructure, dielectric properties, and energy-storage performances of the thin films were investigated in detail. The prepared films at 750 °C had a layered perovskite structure with an excellent crystalline morphology, featuring a high dielectric constant of 43.8 and a low dielectric loss < 2% at 1 kHz, which lead the significantly improvement of breakdown strength to increase the energy storage properties. The maximum recoverable energy density of 4.3 J/cm³ with an efficiency of 70.7% under the electric field of 1.90 MV/cm has been obtained for the Bi_3.15Nd_0.85Ti₃O₁₂ film capacitors at 750 °C. These properties indicate that Bi_3.15Nd_0.85Ti₃O₁₂ system is a promising environmentally friendly lead-free ferroelectric.

Keywords:

• Lead-free thin films
• annealing temperature
• dielectric
• ferroelectric
• energy storage

Disclosure Statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This work was supported by the Zhejiang Provincial Natural Science Foundation (No. LQ22A040012), Fundamental Research Funds for the Provincial Universities of Zhejiang (No. GK219909299001-013), and Scientific Research Foundation of Hangzhou Dianzi University (No. KYS075621021).