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Abstract
Thin films of ferroelectric lead zirconate titanate (PZT) were deposited in-situ by rf magnetron sputtering on thermally oxidized Si/Ti/Pt, ITO coated glass, SrTiO3/YBCO, and MgO/YBCO substrates. PZT films grown on multilayer Si substrates showed tendency for electric short that was subsided when a lead titanate diffusion barrier was used. The glass/ITO/PZT films displayed a phase transformation from pyrochlore to perovskite at 600°C. Epitaxial PZT thin films deposited on YBCO displayed all the ‘001’ peaks from the c-axis oriented YBCO films as well as the ‘00m’ peaks from the PZT films. The remnant polarization and coercive field of MgO/YBCO/PZT films were 20 μC/cm2 and 45 kV/cm, respectively, compared with 8μC/cm2 and 50 kV/cm for the Si-based PZT films. All optimum films prepared showed a dissipation factor of under 5% at 1 kHz.