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Abstract
Pb(Zh x , Ti1-x )O3(PZT) thin films were deposited on Si substrates using MgTiO3 as the buffer layer and the electrical properties of those MFIS structures were investigated. PZT and MgTiO3 films were made by MOCVD using ultrasonic spraying technique. Perovskite PZT films have been succesfully made at the substrate temperature of 550 to 600°C only when using MgTiO3 buffer layer. AES depth profile analysis and RBS analysis revealed that there is no remarkable interdiffusion and no formation of reaction layer between PZT and MgTiO3 and/or between MgTiO3 and Si substrate. The capacitance-voltage (C-V) curves of the MFIS structure which were made with PZT and MgTiO3buffer layer have shown the hysteresis resulted from the ferroelectric switching of the PZT films.