Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 16, 1997 - Issue 1-4
249
Views
37
CrossRef citations to date
0
Altmetric
Memory devices and charecterization

Size effects in polarization switching in ferroelectric thin films

Pages 237-244 | Received 18 Mar 1996, Published online: 19 Aug 2006
 

Abstract

The scenarios of the size effects which may account for the difference in the switching properties of ferroelectric thin films and bulk ferroelectrics are critically reviewed. It is shown that the two often used models (the Janovec-Kay-Dunn surface nucleation size effect and the dielectric layer model) are irrelevant to the experimentally observed thickness dependence of the coercive field in the films. The surface pinning model and the depletion-assisted nearby electrode nucleation model are shown to be consistent with the experimental observations. It is shown that the Miller-Weinreih law for wall velocity cannot be expected in thin films.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.