Electrical properties of ferroelectric-capacitor-gate si mos transistors using p(l)zt films

Abstract

A ferroelectric-capacitor-gate Si MOSFET which consists of an SiO₂/Si MOSFET and a ferroelectric capacitor has been demonstrated. It is shown that memory functions can be obtained by connecting the ferroelectric capacitor with the gate of MOSFETs. The operation of such devices is similar to that of metal-ferroelectric-semiconductor (MFS) FETs. The large memory window or threshold voltage shift can be obtained with a ferroelectric capacitor which has a large coercive voltage. The memory effect of the device has been demonstrated by showing the drain current change by a previously applied “write” pulse at a fixed gate voltage of 0V.