Epitaxial and large area PLD ferroelectric thin film heterostructures on silicon substrates

Abstract

Epitaxial thin films of Bi₄Ti₃O₁₂ and SrBi₂Ta₂O₉ have been deposited by pulsed laser deposition (PLD) onto epitaxial thin film templates of CeO₂/YSZ as well as on epitaxial electrodes of (La_0.5Sr_0.5)CoO₃, in turn deposited onto CeO₂/YSZ template layers. These electrode and buffer layers have been deposited by PLD as well. The same heterostructures, namely ferroelectric Bilayered perovskite films on the same stack of epitaxial layers, have also been deposited by large area PLD. This technique allows deposition with a good uniformity onto entire silicon 3-inch wafers. Thickness and composition uniformity of the ferroelectric films, electrodes and buffer layers are important with regard to their possible application in microelectronics. Uniformities achieved are in the range of 5 to 15% of the mean thickness, depending on the material and deposition conditions.

Key Words:

• large area PLD
• epitaxial ferroelectric film heterostructures