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Abstract
It has been shown that ferroelectric materials are suitable for non volatile memories. To replace other technologies these materials have to fulfill several requirements, one is a sufficient switching velocity of the material. At present, memory access times amount to 10 to 50 ns. Hence, ferroelectric materials should exhibit access times similar to these values. As a result, the polarization switching must be completed within a few nanoseconds. This work presents fast pulse switching measurements with speeds equal to the speed in a real memory device. For all samples studied, a significant increase in the coercive voltage has been observed at rise times of the excitation signal of about one nanosecond. A qualitative model is suggested to explain the behavior of the material at highest speed compared to the hysteresis curve data recorded by low frequencies. It is distinguished between externally determined and intrinsic part of the polarization switching current.
