Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 23, 1999 - Issue 1-4
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Original Articles

Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films

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Pages 229-257 | Received 07 Jun 1999, Published online: 19 Aug 2006
 

Abstract

By means of r.f. sputtering the polycrystalline Pb(Zr0.53Ti0.45W0.01Cd0.01)O3 ferroelectric thin films of df = (0.5 − 10) μm in thickness have been obtained. A disk ceramics obtained by hot pressing method or a layer of powdered ceramic samples was used as a target. On the basis of structure analysis by X-ray diffraction conditions which are necessary for obtaining thin ferroelectric, stoichiometric films having a perovskite-type structure have been determined. Regions of amorphous film deposition, pyrochlore-type structure or mixture of pyrochlore-type and perovskite-type structure are also presented in diagram “working gas pressure versus substrate temperature” (p 02 - Ts ). New experimental data on pyrochlore-type structure metastability and its conversion into perovskite-type structure caused by thermal treatment are obtained.

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