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Abstract
Thin films of Bi based layered-structure solid solution, SrBi2Ta2O9-SrBi2Nb2O9 (SBTN), were prepared by conventional single target RF-magnetron sputtering on Pt/Ti/SiO2/Si substrates with a diameter of 6 inches. The capacitors were fabricated by patterning the top Pt electrode using photolithography. SBTN thin films with random and c-axis preferred orientation were obtained using RTP annealing and conventional furnace annealing, respectively. The electrical properties were characterized by both the hysteresis and pulsed field methods. A 2Pr of 24 μC/cm2 and Ec of 125kV/cm were measured from randomly oriented 1600Å films. The films exhibit excellent fatigue performance.