Comparison of electrical and photovoltaic parameters of the hetero-junction solar cells based on CZTS and CIGS ultrathin films

ABSTRACT

Copper-Zinc-Tin-Sulphide (CZTS)/n-Si and Copper-Indium-Gallium-Selenide (CIGS)/n-Si hetero-junction solar cells have been manufactured using Pulse Laser Deposition (PLD) technique. Properties of both CZTS&CIGS ultrathin films have been produced in comparable thicknesses, analysed and compared to each other. CIGS ultrathin film has smaller main crystalline size but absorbs more light compared to CZTS. $\mathit{J}-\mathit{V}$ characteristics of CZTS/n-Si and CIGS/n-Si hetero-junctions have been obtained in the darkness and under light conditions. The ideality factor, barrier height, serial resistances of these hetero-junctions have been calculated by the traditional $\mathit{J}-\mathit{V}$ and Cheung-Cheung methods for the darkness. Although the serial resistance of CZTS hetero-junction has been found to be very low compared to CIGS hetero-junction, the efficiency and photocurrent of CZTS solar cell have been higher compared to those of CIGS solar cell$\mathit{J}-\mathit{V}$. The photoelectric outputs of CZTS/n-Si and CIGS/n-Si cells have been studied using SCAPS-1D programme. We have found/concluded difference in $\mathit{J}-\mathit{V}$ characteristics between CZTS/n-Si and CIGS/n-Si structures.

KEYWORDS:

• CZTS
• cigs
• ultrathin film
• solar cell
• heterojunction
• efficiency

Acknowledgments

Authors kindly would like to thank,

- Selçuk University, High Technology Research and Application Center and

Selçuk University, Laser Induced Proton Therapy Application and Research Center for supplying with Infrastructure and

- Selçuk University, Scientific Research Projects Coordination (BAP) Unit for grands via projects with references of 20401018 and 18401178.

-Dr. Marc Burgelman’s group at The University of Gent, Belgium for offering SCAPS-1D simulation programme.

Disclosure statement

No potential conflict of interest was reported by the author(s).