VI. Is the Hall effect in silicon inversion layers consistent with macroscopic inhomogeneities?

Abstract

Measurements are reported on voltages, which appear between the Hall contacts on n-channel inversion-layer structures, but whose values are independent of magnetic field. The dependence of these voltages on temperature and carrier concentration is shown to be consistent with the existence of macroscopic inhomogeneities in the conducting channel. Also reported is the behaviour of the voltages when the sample is driven non-Ohmic by increasing the applied electric field.