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Original Articles

The pinning of the charge density wave to irradiation-induced defects

Electron diffraction study of 1T-TaS2 and TaS3

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Pages 361-373 | Received 15 Jun 1981, Accepted 18 Aug 1981, Published online: 01 Dec 2006
 

Abstract

Electron diffraction patterns from neutron- and electron-irradiated samples together with in situ observations in a high-voltage electron microscope have been used to follow the effects of disorder on the periodic lattice distortion (PLD) associated with the charge density wave (CDW) in the quasi two-dimensional conductor 1T-TaS2 and in the quasi one-dimensional conductor TaS2. The pinning of the CDW to a low concentration of irradiation-induced defects, of the order of 10−3 displacements per Ta atom (d.p.Ta), suppresses the commensurate CDW locked-in to the lattice in 1T-TaS2 and the three-dimensional ordering of the CDW in TaS3. With increasing disorder the CDW loses more and more of its flexibility, this leads finally to a defect-dominated strongly incoherent distortion which has no temperature dependence. Even at high doses (a few 10−1 d.p.Ta in 1T-TaS2) the distortion is still present and the position of the diffuse scattering that it produces (q = 2k F) is the same as in the pure sample at high temperatures, indicating no change in the band filling arising from irradiation-induced defects.

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