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Abstract
The kinetics of competitive tunnelling recombination paths are treated theoretically, and solutions are obtained for tunnelling radiative and non-radiative recombination mechanisms. A general solution is given in the form of a non-linear integral equation that can readily be solved numerically. Results are compared with a Monte Carlo solution and with experimental data for GaP : N and for a-Si : H from the literature. The mechanism of non-radiative recombination in a-Si : H is discussed.