Calculation of localized-state energy distributions from transient-photoresponse data

Abstract

Time-of-flight studies of carrier transport through films of an amorphous semiconductor may be used to explore the energy distribution of shallow localized states in such materials. In this paper, we describe a new and computationally straightforward procedure for this purpose. The effectiveness of both this and previous techniques is evaluated using computer-generated time-of-flight data for model semiconductor films having known energy distributions of localized states. The procedures are also assessed in relation to recent experimental data for electron transport in amorphous silicon.