Effect of hydrogen on disorder in amorphous silicon

Abstract

In this work the effects of posthydrogenation on amorphous silicon network disorder are investigated. The bond angle distribution as determined from Raman linewidths actually increased slightly when the H concentration was increased from 0·2 to 7 at. % rather than decreasing as expected. The H appears to introduce compressive stress on a number of bonds. Furthermore, H incorporation did not significantly alter the band-tail state density either. The H bonding in a-Si does not decrease the number of weak bonds significantly.