Lattice images of narrow-bandgap semiconductors: InP, InAs and InSb

K. Watanabe Tokyo Metropolitan Technical College, 1-10-40 Higashiohi Shinagawa-ku, Tokyo, 140, Japan

N. Hashikawa Tokyo Metropolitan Technical College, 1-10-40 Higashiohi Shinagawa-ku, Tokyo, 140, Japan

K. Hiratsuka Tokyo Metropolitan Technical College, 1-10-40 Higashiohi Shinagawa-ku, Tokyo, 140, Japan

K. Nakamura Tokyo Metropolitan Technical College, 1-10-40 Higashiohi Shinagawa-ku, Tokyo, 140, Japan

C. Tsuruta Tokyo Metropolitan Technical College, 1-10-40 Higashiohi Shinagawa-ku, Tokyo, 140, Japan

H. Yamaguchi Department of Physics, Faculty of Science, Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo, 162, Japan

I. Hashimoto Hitachi Keisoku Engineering Co., Ltd., 882 Ichige, Katsuta-shi, Ibaraki 312, Japan

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Abstract

Lattice images of the narrow-bandgap III-V semiconductors InP, InAs and InSb have been obtained in the [110] projection using 300 kV transmission electron microscopy. By fitting observed through-focus images and their intensity distributions with simulated images, the effects of the difference between the atomic numbers of the components and screening of valence charge electrons due to ionicity on lattice images are examined. It is found that the screening effect is indispensable to the accurate reproduction of intensity difference in white or black spots corresponding to a closed atom pair, and their clear resolution. For a large difference between the atomic numbers, the conventional simulation obtained by neutral atoms can be accurately utilized for discussions of atomic structure and chemical information.

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Lattice images of narrow-bandgap semiconductors: InP, InAs and InSb

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