Analysis of a micro pressure-sensor employing SiC-AlN-SiC structure

ABSTRACT

In this research paper, we design a touch mode capacitive micro pressure-sensor with circular stepped-cavity and SiC-AlN-SiC material structure, which can be more precisely measured pressure in a high-temperature environment. Using the finite element analysis method (based on ANSYS software), we found that the sensitivity of the sensor reached 3.5 pF/MPa, up almost one-third from traditional single-cavity structure in the long linear working range as 0.9–1.4 MPa. Moreover, the research to thermal behaviours of the sensor is shown that high temperature has affected the diaphragm deformation and the von Mises stress of the sensor due to thermal buckling. But the thermal deformation did not change the intrinsic characteristics of this sensor. Consequently, the sensor packaging with high-temperature ceramic material is endured the higher temperature to be applied in a harsh environment.

KEYWORDS:

• Pressure sensor
• SiC-AlN-SiC
• Thermal behaviours
• MicroElectroMechanical Systems

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by Science and Technology Research in Henan Province Department of Education of China [13A535073], and Research Funding in Henan University of China [2012YBZR037].

Notes on contributors

Haojie Lv

Dr. Haojie Lv received his  Ph.D. in Instruments Science and Technology from Xiamen University in 2011. Since 2011, he has been a faculty member as a Lecturer (2011-2013), Associate Professor (2013-now) in Henan University. Currently, he is the Director of the Measurement & Control Technology and Instrument department. His research interests include Micro/Nano sensor and acutator, Wide band-gap semiconductor devices.

Kaiyuan Lai

Kaiyuan Laiis a post-graduate student majoring in optical engineering in Henan University, Kaifeng, China. His current research interests include photoconductive semiconductor switch (PCSS), preparation technology of AlN and SiC films.

Yonglan Qi

Yonglan Qi is a post-graduate student majoring in detection technology and automatic equipment in Henan University, Kaifeng, China. Her current research interests include SiC-based schottky diode gas sensor, semiconductor device.