Tunable work function in Junctionless Tunnel FETs for performance enhancement

ABSTRACT

This paper explores the performance of a Junctionless Tunnel field effect transistor (JLTFET) by varying the work function (WF) of the gate electrodes. JLTFET exploits the working principle of a Tunnel field effect transistor (TFET) in Junctionless FETs (JLFETs) by tuning the WF of the two gates, control gate (CG) and auxiliary gate (AG). High I_on/I_off ratio of 5.8 × 10¹¹ and average subthreshold swing of 60 mV/decade are obtained for an optimised WF of CG and AG. DC parameters, threshold voltage (V_T) and subthreshold swing (SS), AC parameters, intrinsic gain and unity gain cut-off frequency (f_t) are extracted with respect to WF variation of the two gates. The JLTFET exhibits less SS and high intrinsic gain for higher values of WF of AG.

KEYWORDS:

• Junctionless Tunnel Field Effect Transistor (JLTFET)
• subthreshold swing (SS)
• TCAD
• threshold voltage (V_T)
• trans-conductance (g_m)
• unity gain cut-off frequency (f_t)
• work function (WF)

Additional information

Funding

This work is supported by Department of Science and Technology, Government of India under SERB scheme [Grant No. SERB/F/2660];