Defect formation of Au thin films on SiO₂/Si upon annealing

Abstract

We have studied structural changes of Au film surfaces grown on Si with native oxide layers. Using X-ray photoelectron spectroscopy (XPS), we found that annealing above 200°C can cause formation of defects (or cracks), which is most likely driven by interdiffusion of Au and Si accompanying strong Au–Si interactions at the interface regime. Scanning tunneling microscopy (STM) study is also in line with defect formation upon annealing. Interaction of O₂ with rough Au surfaces is discussed in connection with catalytic activities of Au surfaces.

Acknowledgments

Deutsche Forschungsgemeinschaft (DFG) is acknowledged for the financial support within the project SFB 513 TP A15.