Advanced search
Publication Cover
Philosophical Magazine Volume 83, 2003 - Issue 28
Submit an article Journal homepage
104
Views
5
CrossRef citations to date
0
Altmetric
Original Articles

In-plane and out-of-plane anisotropic magnetoresistances in La1 −xPbxMnO3 thin films

D. K. Aswal Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
A. Singh Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
C. Thinaharan Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
S. M. Yusuf Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
C. S. Viswanadham Atomic Fuels Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
G. L. Goswami Atomic Fuels Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
L. C. Gupta Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005, India
,
S. K. Gupta Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085, India
,
J. V. Yakhmi Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085, India
&
V. C. Sahni Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085, India
 show all
Pages 3181-3191 | Received 31 Mar 2003, Accepted 14 Jul 2003, Published online: 04 Jun 2010
 
Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days

Abstract

The temperature and field dependences of in-plane (IP) and out-of-plane (OP) anisotropic magnetoresistances (AMRs) have been measured in La1 − x Pb x MnO3 (LPMO) thin films having different microstructures, namely the single-crystal (SC), nanocrystalline (NC) and polycrystalline (PC) microstructures. The OP AMR, irrespective of the microstructure, is found to be considerably larger than the IP AMR. The magnetization data show that the larger OP AMR arises because magnetization is favoured in the film plane owing to strain anisotropy. In addition, the temperature and field dependences of both IP and OP AMRs are governed by the crystallinity of the films, indicating that the AMRs are strongly influenced by the magnetization process.

Acknowledgement

The authors thank M. D. Mukadam for making Vibrating-Sample Magnetometer measurements.

Log in via your institution

Access through your institution

Log in to Taylor & Francis Online

Restore content access

Restore content access for purchases made as guest
Purchase options * Save for later

PDF download + Online access

  • 48 hours access to article PDF & online version
  • Article PDF can be downloaded
  • Article PDF can be printed
USD 61.00 Add to cart

Issue Purchase

  • 30 days online access to complete issue
  • Article PDFs can be downloaded
  • Article PDFs can be printed
USD 786.00 Add to cart

* Local tax will be added as applicable

Related Research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.