Complex and superlattice stacking faults in D0₁₉ Co₃W

Abstract

Planar defects present in annealed D0₁₉ Co₃W crystals have been investigated by conventional transmission electron microscopy. Although a predominance of superlattice stacking faults was observed, five antiphase boundaries and four complex stacking faults were identified. All planar defects were observed in locked configurations or ended at grain boundaries. A comparison of relative defect energies has been carried out with a geometrical model based on pairwise interaction energies. The results suggest that the relative number of defects is not directly related to their expected energy, but rather has origin in locked configurations adopted during crystal growth and annealing.

Acknowledgments

The authors acknowledge Fundação para a Ciência e a Tecnologia, project POCTI/CTM/48617/2002, for financial support.