Abstract
The relation between the concentration of free charge carriers and the concentration of copper atoms in Bi2Te3 single crystals doped with copper over a wide range of concentrations has been investigated, with the aim of clarifying the existence of inactive Cu ions. Changes in the concentration of free charge carriers arising from Cu-doping of the melt with that induced by electrochemical intercalation of copper are compared. Models of possible defect structures are proposed for both doped and intercalated single crystals of Bi2Te3.
Acknowledgements
The financial support of the Academy of Sciences of the Czech Republic (Research Plan AV0Z40320502), the Ministry of Education, and Youth and Sports (project MSM 0021627501 and project LC523) is gratefully acknowledged.