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Original Articles

Metal–insulator transition in boron-doped amorphous carbon films

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Pages 811-821 | Received 20 Mar 2006, Accepted 30 Aug 2006, Published online: 11 Jan 2007
 

Abstract

Boron-doped amorphous graphite-like carbon (GLC) films have been prepared with different boron concentrations. Electrical transport measurements in the temperature range 1.3–300 K on the films shows a doping-induced metal–insulator (MI) transition. On the metallic side of the transition, the experimental data are interpreted in terms of weak localization and the effect of electron–electron interactions. Data on the insulator side of transition are analyzed in terms of hopping conduction. Critical behaviour is observed near the transition, with the resistivity obeying a power-law temperature dependence.

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