High-brightness gallium nitride nanowire UV–blue light emitting diodes

Abstract

We report on high-brightness GaN nanowire UV–blue light emitting diodes (LEDs), which are fabricated by coupling of n-GaN nanowires and p-GaN substrates using two assembly methods, random dispersion (RD) and dielectrophoresis assisted assembly deposition (DAAD). These GaN nanowire LEDs have bright UV–blue emission (411–437 nm) from the n-GaN nanowire/p-GaN substrate junction and the light emission is strong enough to be observed with the naked eye even for a single GaN nanowire LED. The results reported here should have significant implications for the fabrication of highly efficient, low-cost UV–blue LEDs with low power consumption, as compared to conventional thin-film based GaN LEDs.

Acknowledgments

This work was supported by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-005-J07501). S.K.L thanks H.-J. Choi, H.-K. Seong, E.-K.Suh, C.-H. Hong, and N.-K. Cho for their assistance. P.Y. thanks supports from DARPA-UPR and Department of Energy.