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Philosophical Magazine Volume 88, 2008 - Issue 25
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Original Articles

Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD

N.-M. Liao State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
,
W. Li State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaCorrespondence[email protected].
,
Y.-D. Jiang State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
,
Z.-M. Wu State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
,
K.-C. Qi School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China
&
S.-B. Li School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China
Pages 3051-3057 | Received 09 Apr 2008, Accepted 23 Sep 2008, Published online: 28 Nov 2008
 
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Abstract

Effects of silane temperature (T g) before glow-discharge on the optical and transport properties of hydrogenated amorphous silicon (a-Si:H) thin films were investigated. The optical measurements show that the refractive index increases with increasing T g. The transport characterizations show that when T g increases, the dark conductivity increases. However, the temperature coefficient of resistance decreases. In addition, after holding at 130°C for 20 h, the resistance variation, ΔR/R, of the films deposited at T g = room temperature (10.8%) is much larger than those deposited at silane temperatures of 80°C (3%) and 160°C (2%). This can be attributed to different rates of defect creation in a-Si:H films caused by various T g.

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