Quantum lifetimes and momentum relaxation of electrons and holes in Ga_0.7In_0.3N_0.015As_0.985/GaAs quantum wells

Abstract

Electronic transport in n- and p-type modulation-doped Ga_0.7In_0.3N_0.015As_0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32 K and at magnetic fields up to B = 11 T. The momentum relaxation and the quantum lifetimes (τ_q ) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes, respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space, while a large angle-scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with nitrogen complexes and to the lack of such a mechanism for holes.

Keywords:

• GaInNAs
• effective mass
• quantum lifetime

Acknowledgements

ET is grateful to the Scientific and Technical Research Council of Turkey TUBITAK (Project No: 110T377) and Anadolu University (Project No: 091047) for financial support. We also acknowledge the support of COST Action: MP0805 for providing a suitable platform for the successful execution of this research.