α-In₂S₃ and β-In₂S₃ phases produced by SILAR technique

Abstract

In₂S₃ films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In₂S₃ (cubic) and β-In₂S₃ (tetragonal) phases. The presence of the α-In₂S₃ phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37 eV with increasing thickness.

Keywords:

• α-In₂S₃
• β-In₂S₃
• SILAR
• X-ray diffraction
• FESEM
• optical properties

Acknowledgments

Authors thank the Faculty of Science Anadolu University for XRD and FESEM measurements and Buket Zor from the Architecture Department, METU, Ankara, for drawing the unit cell configuration.