Thermoluminescence characteristics of Tl₄GaIn₃S₈ layered single crystals

Abstract

The properties of trapping centres in – as grown – Tl₄GaIn₃S₈ layered single crystals were investigated in the temperature range of 10–300 K using thermoluminescence (TL) measurements. TL curve was analysed to characterize the defects responsible for the observed peaks. Thermal activation energies of the trapping centres were determined using various methods: curve fitting, initial rise and peak shape methods. The results indicated that the peak observed in the low-temperature region composed of many overlapped peaks corresponding to distributed trapping centres in the crystal structure. The apparent thermal energies of the distributed traps were observed to be shifted from ~12 to ~125 meV by increasing the illumination temperature from 10 to 36 K. The analysis revealed that the first-order kinetics (slow retrapping) obeys for deeper level located at 292 meV.

Keywords:

• defects
• semiconductors
• crystals

Acknowledgements

The authors are grateful to Prof. Dr. E. Bulur for the valuable discussions.