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Part A: Materials Science

Application of random walk concept to the cyclic diffusion mechanisms for self-diffusion in intermetallic compounds

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Pages 404-419 | Received 17 Apr 2013, Accepted 13 Aug 2013, Published online: 01 Nov 2013
 

Abstract

Huntington–Elcock–McCombie (HEM) mechanism involving six consecutive and correlated jumps, a triple-defect mechanism (TDM) involving three correlated jumps and an anti-structure bridge (ASB) mechanism invoking the migration of an anti-structure atom are the three mechanisms currently in vogue to explain the self- and solute diffusion in intermetallic compounds. Among them, HEM and TDM are cyclic in nature. The HEM and TDM constitute the theme of the present article. The concept of random walk is applied to them and appropriate expressions for the diffusion coefficient are derived. These equations are then employed to estimate activation energies for self-diffusion via HEM and TDM processes and compared with the available experimental data on activation energy for self-diffusion in intermetallic compounds. The resulting activation energies do not favour HEM and TDM for the self-diffusion in intermetallic compounds. A comparison of the sum of experimentally determined activation energies for vacancy formation and migration with the activation energies for self-diffusion determined from radioactive tracer method favours the conventional monovacancy-mediated process for self-diffusion in intermetallic compounds.

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