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Part A: Materials Science

Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities

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Pages 925-932 | Received 05 Jul 2013, Accepted 21 Nov 2013, Published online: 28 Jan 2014
 

Abstract

Electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode were investigated under various illumination intensities. Field emission scanning electron microscope micrographs of the interfacial polymer layer were provided for verification of the nano-fibre pattern. The current–voltage (IV) measurements of the diode in the dark and under various illumination intensities (50–250 mW/cm2) were carried out and the main electrical parameters of the diode such as leakage current (I0), ideality factor (n), zero-bias barrier height (ΦB0), series and shunt resistance (Rs and Rsh), density of surface states (Nss), open circuit voltage (Voc) and short-circuit current (Isc) were obtained in these conditions.

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