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Philosophical Magazine Volume 94, 2014 - Issue 28
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Part A: Material Science

Effect of annealing temperature on photoelectrochemical properties of nanocrystalline MoBi2(Se0.5Te0.5)5 thin films

Manauti Salunkhe Materials Research Laboratory, Department of Chemistry, Shivaji University , Kolhapur416004, India
,
Nita Pawar Materials Research Laboratory, Department of Chemistry, Shivaji University , Kolhapur416004, India
,
P.S. Patil Thin Film Materials Laboratory, Department of Physics, Shivaji University , Kolhapur416004, India
&
P.N. Bhosale Materials Research Laboratory, Department of Chemistry, Shivaji University , Kolhapur416004, IndiaCorrespondence[email protected]
[email protected]
Pages 3195-3205 | Received 13 Dec 2013, Accepted 14 Jul 2014, Published online: 12 Sep 2014
 
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Abstract

Nanocrystalline MoBi2(Se0.5Te0.5)5 thermoelectric thin films have been deposited on ultrasonically cleaned glass and FTO-coated glass substrates by Arrested Precipitation Technique. The change in properties of MoBi2(Se0.5Te0.5)5 thin films were examined after annealing at the temperature 473 K for 3 h. The structural, morphological, compositional and electrical properties of thin films were characterized by X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, etc. Thermoelectric properties of the thin films have been evaluated by measurements of electrical conductivity and Seebeck coefficient in the temperature range 300–500 K. Our aim is to investigate the effect of annealing on behaviour of MoBi2(Se0.5Te0.5)5 thin films along with photoelectrochemical properties.

Acknowledgement

One of the author (MMS) is indebted to University Grant Commission for providing the departmental facility.

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