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Part B: Condensed Matter Physics

Single crystal growth and characterization of URu2Si2

, , , , &
Pages 3672-3680 | Received 15 Apr 2014, Accepted 03 Oct 2014, Published online: 14 Nov 2014
 

Abstract

We review recent progress in single crystal growth and study of electronic properties in . Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.

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