Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

Abstract

We report the simulation of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-InP Schottky contact in the temperature range of 200–400 K by steps of 20 K with and without interface states, traps and tunnelling current. The simulation was carried out using Atlas-Silvaco-Tcad device simulator. The simulation is performed using the appropriate physical models to explain the behaviour of the physical phenomena of the Schottky diode. The simulation results of I–V–T and C–V–T without native oxide, tunnelling current and traps are far away from experimental data. Thus, native oxide, tunnelling current and traps should be considered. Our results strongly suggest that the spatial inhomogeneities at the MS interface did not affect the I–V and C–V characteristics in the simulated temperature range. In addition, the extracted parameters, zero-bias barrier height , capacitance barrier height and the ideality factor were found to be strongly temperature-dependent due to the deviation of the transport mechanism from thermionic emission current. Moreover, the obtained results lead to a coherent explanation of the discrepancy between and . Good agreement of simulated I–V–T and C–V–T results with existing experimental data are obtained by considering a thin native oxide layer at the interface, traps and tunnelling current.

Keywords:

• Schottky diodes
• n-InP
• I–V–T and C–V–T characteristics
• simulation-Silvaco
• transport mechanism
• interface states and traps

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