The structure of a propagating MgAl₂O₄/MgO interface: linked atomic- and μm-scale mechanisms of interface motion

Abstract

To understand how a new phase forms between two reactant layers, MgAl₂O₄ (spinel) has been grown between MgO (periclase) and Al₂O₃ (corundum) single crystals under defined temperature and load. Electron backscatter diffraction data show a topotaxial relationship between the MgO reactant and the MgAl₂O₄ reaction product. These MgAl₂O₄ grains are misoriented from perfect alignment with the MgO substrate by ~2–4°, with misorientation axes concentrated in the interface plane. Further study using atomic resolution scanning transmission electron microscopy shows that in 2D the MgAl₂O₄/MgO interface has a periodic configuration consisting of curved segments (convex towards MgO) joined by regularly spaced misfit dislocations occurring every ~4.5 nm (~23 atomic planes). This configuration is observed along the two equivalent [1 0 0] directions parallel to the MgAl₂O₄/MgO interface, indicating that the 3D geometry of the interface is a grid of convex protrusions of MgAl₂O₄ into MgO. At each minimum between the protrusions is a misfit dislocation. This geometry results from the coupling between long-range diffusion, which supplies Al³⁺ to and removes Mg²⁺ from the reaction interface, and interface reaction, in which climb of the misfit dislocations is the rate-limiting process. The extra oxygen atoms required for dislocation climb were likely derived from the reactant MgO, leaving behind oxygen vacancies that eventually form pores at the interface. The pores are dragged along by the propagating reaction interface, providing additional resistance to interface motion. The pinning effect of the pores leads to doming of the interface on the scale of individual grains.

Keywords:

• Corundum/spinel/periclase interfacial structures
• spinel interlayer growth
• atomic structure
• HAADF-STEM
• EBSD
• misfit dislocations
• interfaces migration
• dislocation climb