Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC

Abstract

Morphology of single Shockley-type stacking faults (SFs) generated by recombination enhanced dislocation glide (REDG) in 4H–SiC are discussed and analysed. A complete set of the 12 different dissociated states of basal-plane dislocation loops is obtained using the crystallographic space group operations. From this set, six different double rhombic-shaped SFs are derived. These tables indicate the rules that connect shapes of SFs with the locations of partial dislocations having different core structures, the positions of slip planes in a unit cell, and the Burgers vectors of partial dislocations. We applied these tables for the analysis of SFs generated by the REDG effect reported in the past articles. Shapes, growing process of SFs and perfect dislocations for origins of SFs were well analysed systematically.

Keywords:

• 4H-SiC
• basal-plane dislocation
• Shockley-type stacking fault
• recombination enhanced dislocation glide
• epitaxial film

Acknowledgement

Authors are grateful to Professor Y. Ikuhara in the University of Tokyo for encouragement and support of this work, and also to Dr. T. Hatakeyama in National Research Institute of Advanced Industrial Science and Technology for critical reading of this manuscript and some suggestions.