ABSTRACT
In this study, we examined the magnetic and electric properties of the Cu-doped Bi2-xCuxIr2O7 (x = 0,0.2,0.4,0.6). The X-ray diffraction confirmed that the Bi2-xCuxIr2O7 had a cubic structure. The electric transport properties indicate that the samples were in a metallic state when x < 0.4, and the metal-insulator transition occurred in the sample at x = 0.6. The behaviour of the resistivity in the composite material was produced by the electron-electron scattering process. The grain boundary effect played a dominant role in the conduction process. It was also found that the antiferromagnetic interactions enhanced with increasing Cu doping at first, but they weakened with further increases in Cu doping. These findings are explained based on the competition among the ferromagnetic Cu–Cu, antiferromagnetic Ir–Ir and antiferromagnetic Ir–Cu interactions.
Disclosure statement
No potential conflict of interest was reported by the authors.