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Abstract
The properties of a highly correlated electron gas are discussed in relation to the recent work of Brinkman and Rice and the concept of the spin polaron. Tentative extensions of the theory are proposed for an electron gas in a random field, and these are checked against the observed behaviour of doped semiconductors. Finally the theory is applied to the properties of VO x ; it is suggested that the concentration of the electron gas in this material is just on the metallic side of the metal–non-metal transition and that the random field due to the high concentration of vacant lattice sites produces Anderson localization.
