Localized states in the mobility gap of amorphous quartz and glass

Abstract

CdSe thin-film transistor structures have been used to determine the distribution, with energy, of ‘slow’ trapping states in the mobility gaps of the amorphous insulators quartz and 7059 glass. The results are in general agreement with the theoretical model proposed by Mott and Davis and do not support the model proposed by Cohen, Fritzsche and Ovshinsky for glassy materials, even in the case of 7059 glass.