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Original Articles

Using the Field Effect in Silicon to Study Charge Processes in a Nematic Cell

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Pages 109-116 | Published online: 31 Aug 2006
 

ABSTRACT

We propose a simple method for the qualitative study of charge processes in a liquid crystal layer at the silicon surface. The method is based on the field effect that has been induced by charges that are localized near the silicon surface. The method is sensitive to the sign of accumulating charge and does allow monitoring a change of the surface charge.

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