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Abstract
The field emission characteristics of an oxidized porous polysilicon were investigated using different oxidation process with Pt/Ti multi layer electrode. The surface oxidation layer on an oxidized porous polysilicon was formed by thermal oxidation and electrochemical oxidation. The emission efficiency of thermal oxidation which was performed in a dry O2 with O2 flow rate of 3 l/min at 900°C for 60 min showed 3.36% at Vps = 16 V. The electrochemical oxidation was formed by solution containing 1 M sulphuric acid under 10 mA/cm2 for 40 sec and was annealed 5 hr to improve oxide quality at 600°C. The emission efficiency of electrochemical oxidation showed 3.81% at Vps = 14 V.