Mechanisms of Conductivity in Metal-Polymer-Si Thin Film Structures

Abstract

Thin film structures of the metal-polymer-Si type have been fabricated. The current-voltage characteristics of these structures versus temperature have been measured and analyzed. The results obtained are treated within such models of charge transport as the Schottky thermionic emission, Pool-Frenkel and hopping mechanisms. The preliminary conclusions about the basic mechanisms of charge transport have been made. The charge carriers transport is explained by the Schottky thermionic emission in the case of the metal-polymer interface and the hopping mechanism in a polymer.

Keywords:

• charge transport
• current-voltage characteristic
• poly(diphenylenephthalide)

Acknowledgments

This work was supported by RFBR grants: No 05-03-34827-MF, 05-02-17321 and the Program of Basic Research of Russian Academy of Sciences “P-8” and “5-OF.”