p-n Type Heterostructures Based on N,N′-Dimethyl Perylene-Tetracarboxylic Acid Diimide

Abstract

Photovoltaic properties of new photosensitive p-n type heterostructures based on N,N′-dimethyl perylene-tetracarboxylic acid diimide and organic [pentacene, hexathiopentacene, lead phthalocyanine] and inorganic [CuI] semiconductors are investigated. The basic attention is focused on the influence of energy diagram parameters and substrate temperatures (T _s) during the deposition on the photosensitivity of heterostructures.

The maximal photovoltage, minimal surface recombination rate, and structural homogeneity of layers for the heterostructures were obtained at T _s = 370 K.

The comparison of the obtained results with energy diagram parameters according to the Anderson model (without taking surface states into account) shows a qualitative agreement for two-layered organic p-n heterojunctions.

Keywords:

• heterostructures
• methyl perylene pigment
• organic semiconductors
• photovoltage