Analysis of Organic Field Effect Transistors as a Maxwell-Wagner Effect Element: Measurement of Nano-Interfacial Polarization and Electric Field Distribution in Organic Film by Optical Second Harmonic Generation

Abstract

A pentacene field-effect transistor (FET) is analyzed as a Maxwell-Wagner effect element, assuming that carriers injected from a source electrode are accumulated at the interface between the gate and pentacene, and they are then conveyed along the channel by the electric field formed between the Source and Drain electrodes. The optical second harmonic generation (SHG) from the channel well probes an electric field formed by injected carriers, and it is dependent on the off- and on-state of the FET channel. We conclude that the analysis of the pentacene organic FET as a Maxwell-Wagner effect element is acceptable.

Keywords:

• Maxwell-Wagner model
• optical second harmonic generation
• organic FET
• pentacene