Anthracene-Based Organic Field-Effect Transistor: Temperature Dependence of the Current-Voltage Characteristics

Abstract

We present the characterization of an anthracene single-crystal organic field-effect transistor in the temperature-range of 4.2 to 290 K. We recorded the source-drain current as a function of the applied voltages (source-drain and gate). The measured curves exhibit a superlinear dependence when plotted on a log-log scale with an exponent larger than two, which is typical of a trap-filling regime. At low temperatures, the source-drain current becomes temperature independent and shows a plateau. We estimate a lower bound of the mobility at different temperatures.

Acknowledgments

This work was part of the European research project CHIC (contract no. IST-2001-33578) and of the research program of the Stichting voor Fundamenteel Onderzoek der Materie, which is part of the NWO. M. K. acknowledges also the support from Russian Foundation for Basic Research (07-02-00547).