Synthesis and Characterization of Fluoro-co-Phenyl Silsesquioxane (FCPSQ) for Low Dielectric Constant Materials

Abstract

A new type of low-k dielectric material, poly(tridecafluoro1,1,2,2,tetrahydrooctyl-co-phenylsilsesquioxane) (PFCPSQ) was synthesized by hydrolysis and condensation reaction of trimethoxysilyl monomers in the presence of a base catalyst in H₂O/THF mixture solvent at 25°C. Chemical compositions, molecular weight, and structure of the obtained PFCPSQs were characterized using ¹H NMR, ²⁹Si NMR, FT-IR, and GPC. Dielectric values were examined by a HP-4190 system and a dielectric constant k of 1.92 was obtained.

Keywords:

• Dielectric material
• fluorine polymer
• silsesquioxane

Acknowledgment

This research was partially supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea. The authors thank the Pohang Accelerator Laboratory for providing the synchrotron radiation source at the 3C2 beam lines used in this study.

Notes

^a calculated by ¹H-NMR integral calculus.